PART |
Description |
Maker |
MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA From old datasheet system
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
PSMN034-100PS |
N-channel 100 V 34.5 m惟 standard level MOSFET in TO220. N-channel 100 V 34.5 mΩ standard level MOSFET in TO220. N-channel 100 V 34.5 m standard level MOSFET in TO220. 32 A, 100 V, 0.0345 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
2SJ289JFTD 2SJ189-TL 2SK1839JJTL |
0.5 A, 100 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET PCP, SC-62, 3 PIN 4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
DOMINANT Opto Technologies Sdn. Bhd.
|
UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING N-channel enhancement type MOS FET
|
NEC
|
2SA1666YI-UL 2SA1666YI-TR 2SC4903YL-UL 2SA1666YI-0 |
200 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR 100 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR 0.2 A, 30 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET 0.2 A, 30 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET 0.2 A, 50 V, 12 ohm, P-CHANNEL, Si, POWER, MOSFET 0.2 A, 20 V, 9 ohm, P-CHANNEL, Si, POWER, MOSFET 0.2 A, 50 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET 0.2 A, 20 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET UHF BAND, Si, RF SMALL SIGNAL, FET 3000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR 1 A, 60 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR 50 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET 100 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR 0.3 A, 100 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92 2 A, 20 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET 2 A, 900 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET 5 A, 30 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Bourns, Inc. LEDtronics, Inc. Integrated Device Technology, Inc. Vishay Beyschlag Air Cost Control Mini-Circuits Moeller Electric, Corp. OSRAM GmbH Cooper Hand Tools KOA Speer Electronics,Inc. ProMOS Technologies, Inc.
|
SUM34N10-35 |
N-Channel 100-V (D-S) 175C MOSFET N-Channel 100-V (D-S) 175C MOSFET
|
Vishay Intertechnology,Inc. Vishay Siliconix
|
SUD40N10-25 |
N-Channel 100-V (D-S) 175C MOSFET N-Channel 100-V (D-S) 175`C MOSFET
|
VISAY[Vishay Siliconix]
|
UPA602T PA602T G11249EJ1V0DS00 UPA602T-A |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-CHANNEL MOS FET 6-PIN 2 CIRCUITS MOS Field Effect Transistor From old datasheet system
|
NEC Corp.
|
IXFN100N10S1 IXFN100N10S3 IXFN100N10S2 |
HiPerFET Power MOSFETs with Schottky Diodes 100 A, 100 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system
|
IXYS, Corp. IXYS[IXYS Corporation]
|
MTB33N10E |
TMOS POWER FET 33 AMPERES 100 VOLTS 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Motorola Mobility Holdings, Inc. Motorola, Inc
|
CM100TJ-12F |
128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT Trench Gate Design 100 Amperes/600 Volts
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
FMP76-01T |
62 A, 100 V, 0.011 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET PLASTIC, ISOPLUS, I4PAK-5
|
IXYS, Corp.
|
|